Analysis of charge injection and contact resistance as a function of electrode surface treatment in ambipolar polymer transistors

作者：Lee Seon Jeng; Kim Chaewon; Jung Seok Heon; Di Pietro Riccardo; Lee Jin Kyun; Kim Jiyoung; Kim Miso; Lee Mi Jung^*

来源：Electronic Materials Letters, 2018, 14(1): 1-6.

DOI：10.1007/s13391-017-6414-0

• ambipolar semiconducting polymers
• organic field effect transistors (OFETs)
• self-assembled monolayers (SAMs)
• contact resistance
• gated four-point probe (gFPP)
• simultaneous contact resistance extraction model

Ambipolar organic field-effect transistors (OFETs) have both of hole and electron enhancements in charge transport. The characteristics of conjugated diketopyrrolopyrrole ambipolar OFETs depend on the metal-contact surface treatment for charge injection. To investigate the charge-injection characteristics of ambipolar transistors, these devices are processed via various types of self-assembled monolayer treatments and annealing. We conclude that treatment by the self-assembled monolayer 1-decanethiol gives the best enhancement of electron charge injection at both 100 and 300 A degrees C annealing temperature. In addition, the contact resistance is calculated by using two methods: One is the gated four-point probe (gFPP) method that gives the voltage drop between channels, and the other is the simultaneous contact resistance extraction method, which extracts the contact resistance from the general transfer curve. We confirm that the gFPP method and the simultaneous extraction method give similar contact resistance, which means that we can extract contact resistance from the general transfer curve without any special contact pattern. Based on these characteristics of ambipolar p- and n-type transistors, we fabricate inverter devices with only one active layer.

• 出版日期2018-1