Design of 340 GHz 2x and 4x Sub-Harmonic Mixers Using Schottky Barrier Diodes in Silicon-Based Technology

作者：Liu, Chao; Li, Qiang; Li, Yihu; Li, Xiang; Liu, Haitao; Xiong, Yong-Zhong^*

来源：Micromachines, 2015, 6(5): 592-599.

DOI：10.3390/mi6050592

This paper presents the design of terahertz 2x and 4x sub-harmonic down-mixers using Schottky Barrier Diodes fabricated in standard 0.13 mu m SiGe BiCMOS technology. The 340 GHz sub-harmonic mixers (SHMs) are designed based on anti-parallel-diode-pairs (APDPs). With the 2nd and 4th harmonic, local oscillator (LO) frequencies of 170 GHz and 85 GHz are used to pump the two 340 GHz SHMs. With LO power of 7 dBm, the 2x SHM exhibits a conversion loss of 34.5-37 dB in the lower band (320-340 GHz) and 35.5-41 dB in the upper band (340-360 GHz); with LO power of 9 dBm, the 4x SHM exhibits a conversion loss of 39-43 dB in the lower band (320-340 GHz) and 40-48 dB in the upper band (340-360 GHz). The measured input 1-dB conversion gain compression point for the 2x and 4x SHMs are -8 dBm and -10 dBm at 325 GHz, respectively. The simulated LO-IF (intermediate frequency) isolation of the 2x SHM is 21.5 dB, and the measured LO-IF isolation of the 4x SHM is 32 dB. The chip areas of the 2x and 4x SHMs are 330 mu m x 580 mu m and 550 mu m x 610 mu m, respectively, including the testing pads.

• 出版日期2015-5
• 单位电子科技大学; 中国工程物理研究院