Diamond Schottky Barrier Diodes With NO2 Exposed Surface and RF-DC Conversion Toward High Power Rectenna

作者：Oishi Toshiyuki^*; Kawano Naoto; Masuya Satoshi; Kasu Makoto

来源：IEEE Electron Device Letters, 2017, 38(1): 87-90.

DOI：10.1109/LED.2016.2626380

• Diamond
• Schottky barrier diodes
• rectifier circuit
• RF-DC conversion
• rectenna

A novel diamond Schottky barrier diode (SBD) with H-terminated surface exposed to NO2 gas is fabricated towardhigh power rectifying antenna (rectenna). The double NO2 exposures are introduced to provide high concentration of 2-D hole gas at the diamond surface. Experimentally, our SBDs have shown to give good rectifier properties with the high current density of 24 A/cm(2) at a forward voltage of -2 V. A dual diode rectifier circuit using two diamond SBDs was designed with diode model constructed from experimental I-V curves. Values of circuit components such as dc block capacitance and load resistance were selected to achieve larger output voltage. Experimentally RF to dc conversion is demonstrated, where RF input voltage with 10 MHz and the amplitude of 9 V was converted into a dc output voltage as large as 4.2 V.

• 出版日期2017-1