Assembly of beta-SiC Nanowires film and humidity sensing performance

作者：Shen, Xiulin; Liu, Haitao; Liu, Silin; Huang, Zhaohui^*; Liu, Yangai; Fang, Minghao; Wu, Xiaowen; Min, Xin

来源：International Journal of Applied Ceramic Technology, 2019, 16(3): 1193-1199.

DOI：10.1111/ijac.13132

• beta-SiC nanowires
• CVD
• electrodes
• humidity sensing

beta-SiC materials have been seen as the third-generation semiconductor widely used in kinds of photoelectric device, high temperature electronics, and other fields. Compared with ordinary semiconductors, beta-SiC materials have huge potential application in replacing monocrystalline silicon in extreme environments because of their numerals extraordinary chemical and physical properties. Based on this, beta-SiC nanowires obviously are more desirable in any way. Here, we present a modified chemical vapor deposition (CVD) method to synthesis beta-SiC nanowires, which needs no protect gas, and transfer it to Si/SiO2 substrates equipped with Au electrodes. The microstructure of the as-prepared samples is tested by field emission scanning electron microscopy (FESEM). The humidity sensing performance of electronic device is measured by electrochemical workstation test equipment. It shows that the resistance of beta-SiC nanowires increases with increasing environment humidity within very short response/recovery time-0.5 seconds/0.5 seconds and also performs excellent cycling stability. Such advantage superiorities make it highly possible to apply beta-SiC nanowires into various environments.

• 出版日期2019-6
• 单位中国地质大学（北京）