Analysis of the Temperature Dependence of the Capacitance-Voltage and Conductance-Voltage Characteristics of Au/TiO2(rutile)/n-Si Structures

作者：Kinaci Baris^*; Ozcelik Suleyman

来源：Journal of Electronic Materials, 2013, 42(6): 1108-1113.

DOI：10.1007/s11664-013-2524-0

• TiO2(rutile)
• DC magnetron sputtering
• capacitance-voltage-temperature characteristic
• conductance-voltage-temperature characteristic

The capacitance-voltage-temperature (C-V-T) and the conductance/angular frequency-voltage-temperature (G/omega-V-T) characteristics of Au/TiO2(rutile)/n-Si Schottky barrier diodes (SBDs) were investigated over the temperature range from 200 K to 380 K by considering the series resistance effect. Titanium dioxide (TiO2) was deposited on n-type silicon (Si) substrate using a direct-current (DC) magnetron sputtering system at 200A degrees C. To improve the crystal quality, the deposited film was annealed at 900A degrees C to promote a phase transition from the amorphous to rutile phase. The C (-2) versus V plots gave a straight line in the reverse-bias region. The main electrical parameters, such as the doping concentration (N (D)), Fermi energy level (E (F)), depletion layer width (W (D)), barrier height (N%26quot; (CV)), and series resistance (R (S)), of Au/TiO2(rutile)/n-Si SBDs were calculated from the C-V-T and the G/omega-V-T characteristics. The obtained results show that N%26quot; (CV), R (S), and W (D) values decrease, while E (F) and N (D) values increase, with increasing temperature.

• 出版日期2013-6