摘要

We applied Ar gas injection while drying droplets of TIPS-pentacene in a quartz tube and controlled the growth direction of the grain boundary and the morphology. The organic thin film transistors (OTFTs) showed a high mobility of 0.53 +/- 0.02 cm(2)/V s with a small deviation of 3.7% when the gas direction was parallel to the source-drain current, resulting in the direction of the grain boundary being parallel to the current. In contrast, OTFTs having grain boundaries perpendicular to the current flow displayed mobility of 0.06 +/- 0.02 cm(2)/V s.

  • 出版日期2011-7