Size effects on the Hall constant in thin gold films

作者:Henriquez Ricardo*; Oyarzun Simon; Flores Marcos; Antonio Suarez Marco; Moraga Luis; Kremer German; Gonzalez Fuentes Claudio A; Robles Marcelo; Munoz Raul C
来源:Journal of Applied Physics, 2010, 108(12): 123704.
DOI:10.1063/1.3525704

摘要

We report the Hall constant R(H), drift mobility mu(D), and Hall mobility mu(H) measured at 4 K in thin gold films deposited on mica substrates, where the dominant electron scattering mechanism is electron-surface scattering. R(H) increases with increasing film thickness and decreases with increasing magnetic field. For high magnetic fields B >= 6 T, R(H) turns out to be approximately independent of magnetic field, and its value is close to that of the free electron model. We use the high magnetic field values of R(H) to determine film thickness. This nondestructive method leads to a determination of film thickness that agrees to within 10% with the thickness measured by other techniques. The theoretical predictions, based upon the theory of Fuchs-Sondheimer and the theory of Calecki, are at variance with experimental observations.

  • 出版日期2010-12-15