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摘要
Utilizing memristor to obtain multi-level memory in nano-crossbar is a promising approach to enhance the memory density. In this paper, we proposed a solution for multi-level programming of memristor in nanocrossbar, which can be implemented on nanocrossbar without the need for extra selective devices. Meanwhile, using a general device model, this solution is demonstrated to be adaptive to a wide range of memristors that have been experimentally fabricated through HSPICE simulation.
- 出版日期2013
- 单位中国人民解放军国防科学技术大学
