Annealing effect on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN MIS device

作者：Chen, Y. R.; Li, Z. M.; Zhang, Z. W.^*; Hu, L. Q.; Jiang, H.; Miao, G. Q.; Song, H.^*

来源：Journal of Alloys and Compounds, 2018, 740: 816-822.

DOI：10.1016/j.jallcom.2018.01.072

• Data storage materials
• Resistive switching
• Metal-insulator-semiconductor
• Annealing effect
• Nonvolatile memory

In this paper, the effect of annealing on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN metal-insulator-semiconductor (MIS) structure memristor is demonstrated. The results show that the stability and repeatability of the bipolar resistive switching are greatly improved in annealed Ti/Si3N4/n-GaN MIS devices. The mechanism involved is revealed by both conductive force microscopy (CFM) and x-ray photoelectron spectroscopy (XPS). It is confirmed to in-situ local Ti doping in Si3N4 by thermal annealing and can be ascribed to the local Ti dopants in the Si3N4 bonding the N atoms at positive bias by electro-reductive process that benefits to form stable nanoscale Si filaments. On the contrary, the Si filaments rupture by recombining with N atoms near the n-GaN side at negative bias. The proposed device is apt to integrate with a GaN-based high electron mobility transistor (HEMT) to structure a one-transistor-one-resistor (1T1R) nonvolatile memory cell, which is expected to develop the application of the nitride semiconductors in data storage in addition to the applications in light-emitting diodes, laser diodes, power devices, and photodetectors.

• 出版日期2018-4-5
• 单位福州大学; 发光学及应用国家重点实验室; 中国科学院长春光学精密机械与物理研究所