Absorption-edge anisotropy of Cu(2)ZnSiQ(4) (Q = S, Se) quaternary compound semiconductors

作者：Levcenco S; Dumcenco D; Huang Y S^*; Arushanov E; Tezlevan V; Tiong K K; Du C H

来源：Journal of Alloys and Compounds, 2011, 509(15): 4924-4928.

DOI：10.1016/j.jallcom.2011.01.169

• Semiconductors
• Optical properties
• Optical spectroscopy

Polarization-dependent absorption characterization of Cu(2)ZnSiQ(4) (Q = S, Se) quaternary single crystal compound semiconductors were carried out in the temperature range of 10-300 K. The absorption measurements were performed on the as grown basal plane with the normal along [2 1 0] and the axis c parallel to the long edge of the crystal platelet. A significant shift towards lower energy was observed in the absorption spectra of E perpendicular to c polarization with respect to those corresponding to E parallel to c polarization. A comprehensive analysis of the absorption spectra revealed that the absorption edges of the studied crystals are indirect allowed transitions. A schematic representation of the plausible assignments for the observed near band edge optical transitions for Cu(2)ZnSiQ(4) was proposed. The variation of the indirect transition energies with temperature were analyzed by Varshni and Bose-Einstein expressions. The parameters that describe the temperature dependence of the indirect transition energies with different polarizations were evaluated and discussed.

• 出版日期2011-4-14