A 0.058 mm(2) 24 mu W Temperature Sensor in CMOS Process with Inaccuracy from-55 to 175 degrees C

作者：Zhu Di^*; Siek Liter

来源：Circuits, Systems, and Signal Processing, 2018, 37(6): 2278-2298.

DOI：10.1007/s00034-017-0685-4

• Temperature sensor
• 40nm standard CMOS
• Gain-enhancement integrator
• Reconfigurable sample and hold

This paper describes the design of a high-accuracy smart temperature sensor in the 40 nm standard CMOS process. Due to process scaling, the high threshold voltages, large leakage currents and low intrinsic gains, etc., cause the realization of conventional high performance analog circuits to become very challenging in advanced processes. In the proposed design, some new techniques have been utilized in order to overcome the obstacles due to process scaling. The sensor's frontend is based on substrate PNP transistors, couple with a two-step zooming ADC. This temperature sensor achieves a two-point calibrated inaccuracy of and a one-point trimmed inaccuracy of over a range of temperature from - 55 to . It draws from a 1.2 V power supply and occupies an area of 0.0578 mm(2).

• 出版日期2018-6
• 单位南阳理工学院