Near-infrared InN quantum dots on high-In composition InGaN

作者：Soto Rodriguez Paul E D; Gomez Victor J; Kumar Praveen; Calleja Enrique; Noetzel Richard

来源：Applied Physics Letters, 2013, 102(13): 131909.

DOI：10.1063/1.4800779

We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (%26gt;50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

• 出版日期2013-4-1