Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices

作者：Hoang A M^*; Chen G; Haddadi A; Pour S Abdollahi; Razeghi M

来源：Applied Physics Letters, 2012, 100(21): 211101.

DOI：10.1063/1.4720094

We demonstrate the feasibility of the InAs/GaSb/AlSb type-II superlattice photodiodes operating at the short wavelength infrared regime below 3 mu m. An n-i-p type-II InAs/GaSb/AlSb photodiode was grown with a designed cut-off wavelength of 2 mu m on a GaSb substrate. At 150 K, the photodiode exhibited a dark current density of 5.6 x 10(-8) A/cm(2) and a front-side-illuminated quantum efficiency of 40.3%, providing an associated shot noise detectivity of 1.0 x 10(13) Jones. The uncooled photodiode showed a dark current density of 2.2 x 10(-3) A/cm(2) and a quantum efficiency of 41.5%, resulting in a detectivity of 1.7 x 10(10) Jones.

• 出版日期2012-5-21
• 单位西北大学