The effect of laser treatment on the morphology and structure of CdSb-Cd1-xMnxTe and CdSb-In-4(Se-3)(1-x) Te-3x thin film heterojunctions

作者：Savchuk A I; Fochuk P M; Strebezhev V V; Kleto G I; Yuriychuk I M^*; Khalavka Y B; Obedzynskyi Yu K; Strebezhev V M

来源：Applied Surface Science, 2017, 418: 536-541.

DOI：10.1016/j.apsusc.2016.11.137

• Thin film
• Heterojunction
• RF sputtering
• Laser
• CdSb

Peculiarities of heteroepitaxial growth of CdSb thin films on A(II)B(VI) and A(III)B(VI) single crystal substrates were studied by atomic-force and scanning electron microscopy. New thin film CdSb-Cd1-xMnxTe and CdSb-In-4(Ses)(1-x)Te-3x heterojunctions were obtained by high-frequency cathode sputtering of CdSb single crystal target. Laser treatment of CdSb films using millisecond YAG-laser with energy density of 0.1-4.5 j/cm(2) has been carried out in order to modify and improve their structure and phase state. Stoichiometry of composition and granular polycrystalline structure of CdSb films on Cd1-xMnxTe and In-4(Se-3)(1-x)Te-3x. substrates have been confirmed by SEM and AFM studies. A stepwise growth processes of grains were detected under laser treatment in CdSb films. Anisotropic shape of grains in CdSb films was found depending on crystallographic orientation of In4Se3 substrate surface.

• 出版日期2017-10-1