Bismuth Hall probes: Preparation, properties and application

作者：Koseva R^*; Moench I; Schumann J; Arndt K F; Schmidt O G

来源：Thin Solid Films, 2010, 518(17): 4847-4851.

DOI：10.1016/j.tsf.2010.02.010

• Bismuth
• Hall probes
• Structural properties
• Electrical properties and measurements
• Hydrogels
• Swell sensor

Bismuth Hall probes with an active area in the mu m(2) and sub-mu m(2) (down to (100 x 100) nm(2)) range have been fabricated on SiO(2)/Si substrates. The structural and electrical properties of Bi films with a thickness of 20-90 nm were investigated. Critical values of the structural characteristics, at which the film resistivity dependences undergo a distinct change were found. The transition to low resistivity, good crystallinity and high degree of texturing were observed at a film thickness of 65 nm. The potential use of the Bi Hall sensor as a swell sensor for monitoring the swelling of stimuli-sensitive hydrogels was demonstrated.

• 出版日期2010-6-30