Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

作者：Chatbouri S^*; Troudi M; Sghaier N; Kalboussi A; Aimez V; Drouin D; Souifi A

来源：Semiconductors, 2016, 50(9): 1163-1167.

DOI：10.1134/S1063782616090062

In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO (x) = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I-V curves confirms the creation of a pair electron/hole (e-h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

• 出版日期2016-9