A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors

作者：Kyndiah, Adrica; Ablat, Abduleziz; Guyot-Reeb, Seymour; Schultz, Thorsten; Zu, Fengshuo; Koch, Norbert; Amsalem, Patrick; Chiodini, Stefano; Alic, Tugbahan Yilmaz; Topal, Yasemin; Kus, Mahmut; Hirsch, Lionel; Fasquel, Sophie; Abbas, Mamatimin^*

来源：Scientific Reports, 2018, 8(1): 10946.

DOI：10.1038/s41598-018-29220-0

• THIN-FILM TRANSISTORS
• ROOM-TEMPERATURE
• SEMICONDUCTORS
• IN2O3
• FIELD
• POLYOXOMETALATE
• ELECTRON
• MOBILITY

Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In2O3 thin film transistors, which results in overall improvement of device performance. This approach not only reduces off-current of the device by more than two orders of magnitude, but also leads to a threshold voltage reduction, as well as significantly enhances the mobility through facilitated charge injection from the electrode to the active layer. Such a mechanism has been elucidated through morphological and spectroscopic studies.

• 出版日期2018-7-19
• 单位新疆大学