Analysis of GaN epilayers on sapphire substrates with GaN and AlN sublayers

作者：Drozdov Yu N^*; Drozdov M N; Khrykin O I; Shashkin V I

来源：Journal of Surface Investigation-X-Ray Synchrotron and Neutron Techniques, 2010, 4(6): 998-1001.

DOI：10.1134/S1027451010060200

The features and results of X-ray diffraction analysis of GaN films are presented. The films are grown by metalorganic vapor-phase epitaxy on c-plane sapphire substrates using GaN or AlN nucleation layers deposited at a low temperature. Measurements of the twist angle and concentrations of Al (x) Ga(1-x) N solid solutions are discussed in detail.

• 出版日期2010-11