摘要

Enhanced photocatalytic activity and high dielectric constant values are achieved by gadolinium (Gd) doping in ZnO. The changes that happened to the wurtzite structure of ZnO on doping are depicted in detail by using x-ray diffraction spectroscopy. The chemical composition is confirmed using energy dispersive x-ray spectroscopy (EDAX). The influence of Gd incorporation in the emission spectra of ZnO is analysed from photoluminescence studies. The photocatalytic activity enhancement occurred in ZnO system on Gd doping was explored by kinetic rate analysis. The optimum incorporation of Gd has enhanced the dielectric constant value and decreased the loss of pristine. The high dielectric constant value and low loss make the system suitable for large scale of applications in microelectronics. The work also proposes large scale synthesis of highly efficient fluorescent Gd doped ZnO photocatalysts.

  • 出版日期2017-1