A 0.4-V low noise amplifier using forward body bias technology for 5 GHz application

作者：Wu Dake; Huang Ru^*; Wong Waisum; Wang Yangyuan

来源：IEEE Microwave and Wireless Components Letters, 2007, 17(7): 543-545.

DOI：10.1109/LMWC.2007.899323

• forward body bias
• low noise amplifier (LNA)
• low power
• low voltage

A fully integrated low noise amplifier (LNA) suitable for ultra low voltage and ultra low power applications is proposed and demonstrated in 0.13 mu m CMOS technology. In order to meet the requirement of ultra low voltage applications, a two-stage common-source configuration is employed. By using forward-body-biased metal oxide semiconductor field effect transistors, the proposed LNA can operate at 0.4 V supply voltage, successfully demonstrating the application potential of dynamic threshold voltage technology in the radio frequency region. The experimental results show that the proposed LNA has a 10.3 dB power gain and a 5.3 dB noise figure, while consuming only 1.03 mW dc power with an ultra low supply voltage of 0.4 V.

• 出版日期2007-7
• 单位北京大学