Annealing temperature dependency of electrical and microstructural properties of Ni-germanide films formed on Ge substrates

作者：Janardhanam V; Lee Hoon Ki; Yoon Jong Won; Kang Seung Min; Choi Chel Jong^*

来源：Journal of Ceramic Processing Research, 2011, 12: S267-S271.

• Ni-germanide
• Ge
• rapid thermal annealing
• micro-void
• Schottky-Ohmic transition

We have investigated the microstructural evolution and current-voltage characteristics of Ni-germanide (NiGe) films formed on n-type and p-type Ge substrates as a function of rapid thermal annealing (RTA) at temperatures in the range of 400-700 degrees C for 30 S under a N-2 ambient. As usually expected from Schottky-Mott theory, the NiGe contacts on p-type Ge substrates showed Ohmic behavior, regardless of RTA temperatures. However, Schottky behavior is observed in NiGe films formed on n-type Ge substrates after an RTA process at less than 600 degrees C, above which NiGe films exhibited Ohmic behavior. Such an abrupt transition of Schottky to Ohmic behavior could be associated with a significant increase in the leakage current under a reverse bias condition caused by the formation of micro-voids in the uneven interface between NiGe films and Ge substrates.

• 出版日期2011-11