A Wideband Flat Gain Low Noise Amplifier Using Active Inductor for Input Matching

作者：Ma, Ting; Hu, Feng^*

来源：IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2019, 66(6): 904-908.

DOI：10.1109/TCSII.2018.2872068

• CMOS
• broadband
• low noise amplifier

This brief presents a wideband flat gain low noise amplifier using active inductor for input matching. The current reuse technique is adopted for the active inductor to reduce power consumption. The noise contribution of the active inductor is optimized by noise cancelling technique. The design is demonstrated in a standard 0.13-mu m CMOS process. The input return loss is better than 10 dB across the bandwidth of 0.7-4.6 GHz. The nominal gain is 10.1 dB with 1.3 dB gain variation in the pass-band. The measured noise figure is below 4.5 dB and the input referred third order intercept point is better than -1.6 dBm. The amplifier consumes 4.4 mA from a 1.4 V supply.

• 出版日期2019-6
• 单位苏州市职业大学; 西南石油大学