A junction characterization for microelectronic devices quality and reliability

作者：Tazibt W^*; Mialhe P; Charles J P; Belkhir M A

来源：Microelectronics Reliability, 2008, 48(3): 348-353.

DOI：10.1016/j.microrel.2007.06.002

With scaling down of devices for higher performance, ageing effects are becoming more important under standard working conditions. They have an important impact on the reliability of microelectronics devices since changes in the devices operating conditions due to lower power consumption are made. This work considers experimental degradations of the emitter-base characteristics in a transistor; the charge transport phenomena are related to structural properties and the evolution of standard operations, which introduce threshold voltage changes related to high injection effects. Both the junction ideality factor and the transient voltage appear as significant and sensitive parameters for quality and reliability characterization or hardness evaluation.
A new reliability parameter RF is introduced and related to ageing of devices and to degradation processes.

• 出版日期2008-3