ALD of high-kappa dielectrics on suspended functionalized SWNTs

作者：Farmer DB^*; Gordon RG

来源：Electrochemical and Solid-State Letters, 2005, 8(4): G89-G91.

DOI：10.1149/1.1862474

Conformal atomic layer deposition (ALD) on as-grown suspended single-walled carbon nanotubes (SWNTs) is not possible due to the inertness of ALD precursor molecules to the SWNT surface. Here, we present a functionalization technique that makes SWNTs reactive with ALD precursors, and deposit high-kappa oxides (Al2O3 and HfO2) onto the nanotubes to illustrate this method. Reactivity of the precursors with the functionalized nanotubes is due to - NO2 functional groups attached to the nanotube sidewalls. The effect of the functionalization on the nanotube conductance is shown to be reversible, and doping caused by the deposited oxides is discussed.

• 出版日期2005