Avalanche breakdown in SOI MESFETs

作者：Lepkowski William; Wilk Seth J; Parsi Anuradha; Saraniti Marco; Ferry David; Thornton Trevor J^*

来源：Solid-State Electronics, 2014, 91: 78-80.

DOI：10.1016/j.sse.2013.10.003

• Silicon-on-insulator
• Partially-depleted
• Avalanche multiplication
• MESFETs
• Schottky junction

Metal-semiconductor field-effect-transistors (MESFETs) have been manufactured using a highly scaled 45 nm silicon-on-insulator (SOI) CMOS technology. The MESFETs display a reversible, soft breakdown at voltages greatly exceeding that of the standard CMOS devices. The breakdown voltage increases with the length of the access region between the MESFET channel and drain contact. The measured breakdown voltage is well described by a simple model based on avalanche multiplication.

• 出版日期2014-1