A 0.007-mm(2) 108-ppm/degrees C 1-MHz Relaxation Oscillator for High-Temperature Applications up to 180 degrees C in 0.13-mu m CMOS

作者：Sadeghi Nima^*; Sharif Bakhtiar Alireza; Mirabbasi Shahriar

来源：IEEE Transactions on Circuits and Systems I-Regular Papers, 2013, 60(7): 1692-1701.

DOI：10.1109/TCSI.2012.2226500

• Capacitor
• high temperature
• oscillator
• resistor
• temperature coefficient
• temperature compensation

Reliable high-temperature CMOS oscillators are required for clock or time-base generation in several applications including data acquisition for aerospace, automotive control, oil field instrumentation, and pulp and paper digesters. In this paper, we present low-complexity resistive and capacitive temperature-compensation techniques for CMOS relaxation oscillators. In such oscillators, the frequency of oscillation is a function of a resistor-capacitor product. The resistive compensation technique employs a recently proposed monolithic resistor with a given temperature coefficient (TC) that uses contacts to adjust the TC of the resistor. The capacitive compensation technique is based on using a varactor to adjust the value of the timing capacitance over temperature to compensate for the high-temperature junction leakage current and to keep the oscillation frequency relatively constant. A prototype oscillator based on the proposed techniques is implemented in a standard 0.13-mu m CMOS process and reliably operates over 25 to 180 degrees C. Measured results show that over the temperature range of interest the compensated oscillator achieves a temperature coefficient of 108 ppm/degrees C. The oscillator along with its output drivers occupies 7200 mu m(2) (2.3 x to 114 x smaller than state-of-the-art designs) and consumes 428 mu W from a 2.5 V supply. For supply variations between 2 and 3 V, the frequency variation is +/- 1.09%/V.

• 出版日期2013-7