科研之友
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摘要
A novel PSOI (parlial silicon-on-insulator) high voltage device with double-faced step buried oxide is proposed, which is called DSB PSOI( PSOI with double-faced step buried-oxide layer) The surface electric field has ideally uniform distribution due to the additive electric field modulation by double step buried oxide. A silicon window underneath the source helps to reduce self-heating. The depletion region spreads into the substrate and the vertical electric field in the buried layer is enhanced, which results in a higher breakdown voltage than that of conventional SOI device. A 2-D quantified optimal relation between the structure parameters is also obtained. The results indicate that the breakdown voltage of DSB PSOI is increased by 58% in comparison with conventional SOI, while maintaining the low on-resistance of the DSB PSOI device.
