摘要

Most titanium silicide one-dimensional (1D) nanostructures have been thus far prepared by using titanium chloride as precursor which is very sensitive to air and very inconvenient to the experimental operations. Herein Ti5Si3 nanowires were synthesized on bare Si substrate via in situ chloride-generated route, and the shortcomings from the direct use of titanium chloride were well avoided. Furthermore, the Si substrate functions as both Si source and substrate; thus, the synthesis and potential integration of titanium silicide nanostructures on a mature silicon substrate is accomplished by one step. In this way the as-synthesized Ti5Si3 nanowires on Si substrate showed promising field-emission behavior.