Design of new Mott multiferroics via complete charge transfer: promising candidates for bulk photovoltaics

作者：Chen, Hanghui^*; Millis, Andrew

来源：Scientific Reports, 2017, 7(1): 6142.

DOI：10.1038/s41598-017-06396-5

Optimal materials to induce bulk photovoltaic effects should lack inversion symmetry and have an optical gap matching the energies of visible radiation. Ferroelectric perovskite oxides such as BaTiO3 and PbTiO3 exhibit substantial polarization and stability, but have the disadvantage of excessively large band gaps. We use both density functional theory and dynamical mean field theory calculations to design a new class of Mott multiferroics-double perovskite oxides A(2)VFeO(6) (A = Ba, Pb, etc). While neither perovskite AVO(3) nor AFeO(3) is ferroelectric, in the double perovskite A(2)VFeO(6) a 'complete' charge transfer from V to Fe leads to a non-bulk-like charge configuration-an empty V-d shell and a half-filled Fe-d shell, giving rise to a polarization comparable to that of ferroelectric ATiO(3). Different from nonmagnetic ATiO(3), the new double perovskite oxides have an antiferromagnetic ground state and around room temperatures, are paramagnetic Mott insulators. Most importantly, the V d(0) state significantly reduces the band gap of A(2)VFeO(6), making it smaller than that of ATiO(3) and BiFeO3 and rendering the new multiferroics a promising candidate to induce bulk photovoltaic effects.

• 出版日期2017-7-21
• 单位华东师范大学