An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier

作者：Lourenco Nelson E^*; Zeinolabedinzadeh Saeed; Ildefonso Adrian; Fleetwood Zachary E; Coen Christopher T; Song Ickhyun; Jung Seungwoo; Inanlou Farzad; Roche Nicolas J H; Khachatrian Ani; McMorrow Dale; Buchner Stephen P; Warner Jeffrey H; Paki Pauline; Cressler John D^*

来源：IEEE Transactions on Nuclear Science, 2016, 63(1): 273-280.

DOI：10.1109/TNS.2015.2509250

• Charge collection
• current injection
• MixCAD
• mixed mode
• NanoTCAD
• parasitics
• radiation hardening
• SiGe HBT
• silicon-germanium technology
• single-event effects (SEE)
• single-event transient (SET)
• two-photon absorption experiments

The single-event transient (SET) response of a SiGe-based, L-band low-noise amplifier (LNA) is investigated, with a focus on providing recommendations for radiation event simulation techniques. Pulsed-laser, two-photon absorption experiments show that the SET sensitivity of the SiGe LNA is highly dependent on operating conditions and strike location. Time and frequency-domain analyses raise potential concerns for digital data modulated on RF carrier signals. Device and circuit-level ion-strike TCAD simulations are utilized to compare alternative simulation approaches, highlight the importance of parasitics on SET simulation accuracy, and suggest best practices for modeling radiation-induced transients within RF/mm-wave circuits.

• 出版日期2016-2