AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein

作者：Lee Hee Ho; Bae Myunghan; Jo Sung Hyun; Shin Jang Kyoo^*; Son Dong Hyeok; Won Chul Ho; Jeong Hyun Min; Lee Jung Hee; Kang Shin Won

来源：Sensors (Switzerland), 2015, 15(8): 18416-18426.

DOI：10.3390/s150818416

• AlGaN
• GaN
• HEMT
• CRP
• biosensor
• null-balancing circuit

In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.

• 出版日期2015-8