摘要
A new band-gap reference (BGR) circuit employing sub-threshold current is proposed for low-voltage operations. By employing the fraction of VBE and the sub-threshold current source, the proposed BGR circuit with chip area of 0.029mm2 was fabricated in the standard 0.18 mu m CMOS triple-well technology. It generates reference voltage of 170mV with power consumption of 2.4 mu W at supply voltage of 1V. The agreement between simulation and measurement shows that the variations of reference voltage are 1.3mV for temperatures from -20 to 100 degrees C, and 1.1mV per volt for supply voltage from 0.95 to 2.5V, respectively.
- 出版日期2011-12
- 单位南开大学