A Low-Loss Bandpass Filter using Edge-Coupled Resonator With Capacitive Feeding in (Bi)-CMOS Technology

作者：Yang, Yang; Zhu, He; Zhu, Xi; Xue, Quan^*

来源：IEEE Electron Device Letters, 2018, 39(6): 787-790.

DOI：10.1109/LED.2018.2826782

• Bandpass filter (BPF)
• (Bi)-CMOS
• miniaturization
• on-chip resonator
• RFIC
• millimeter-wave
• Silicon-Germanium (SiGe)

In this Letter, a flexible approach for low-loss on-chip bandpass filter (BPF) design in CMOS technology is presented. The proposed approach takes the advantages of a combination of an edge-coupled electromagnetic structure, namely resonator, and a pair of metal-insulator-metal capacitors for BPF implementation. To demonstrate the insight of the approach, the designed resonator is analyzed in details by means of a simplified equivalent LC-circuit model. Then, the impact on the BPF design due to the variations of the feeding capacitance is investigated. To prove the concept, both the resonator and BPF are fabricated in a standard 0.13-mu m CMOS technology. The measured results show that the designed resonator can generate a notch with 20-dB attenuation at 59.4 GHz, while the BPF has a center frequency of 35.4 GHz with an insertion loss of 1.7 dB. The chip size of both devices, excluding the test pads, is only 0.039 mm(2) (0.15 x 0.26 mm(2)).

• 出版日期2018-6
• 单位华南理工大学