Competing influence of an in-plane electric field on the Stark shifts in a semiconductor quantum dot

作者：Nakaoka T^*; Tamura Y; Saito T; Miyazawa T; Watanabe K; Ota Y; Iwamoto S; Arakawa Y

来源：Applied Physics Letters, 2011, 99(18): 181109.

DOI：10.1063/1.3658639

We report on the fabrication of a side-gate structure which enables a purely lateral electric field to be applied onto a self-assembled quantum dot. The lateral field produces an unconventional "M'-shaped exciton energy shift-a blueshift followed by a redshift. The unconventional energy shift is reproduced by calculation. The calculation shows that only the positively charged exciton shows the unconventional shift. The origin is attributed to the field-induced hole-concentration in the bottom-corner of the dot, which strongly enhances the repulsive direct Coulomb interaction and reduces the exciton binding energy.

• 出版日期2011-10-31