A laser ablation method for the synthesis of crystalline semiconductor nanowires

作者：Morales AM; Lieber CM^*

来源：Science, 1998, 279(5348): 208-211.

DOI：10.1126/science.279.5348.208

A method combining laser ablation cluster formation and vapor-liquid-solid (VLS) growth was developed for the synthesis of semiconductor nanowires. in this process, laser ablation was used to prepare nanometer-diameter catalyst clusters that define the size of wires produced by VLS growth, This approach was used to prepare bulk quantities of uniform single-crystal silicon and germanium nanowires with diameters of 6 to 20 and 3 to 9 nanometers, respectively, and lengths ranging from 1 to 30 micrometers. Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can De used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.

• 出版日期1998-1-9