A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors

作者：Chang Kow Ming; Chang Chih Tien^*; Chao Kuo Yi; Lin Chia Hung

来源：Sensors (Switzerland), 2010, 10(5): 4643-4654.

DOI：10.3390/s100504643

• drift
• ISFET
• pH-dependent
• ZrO2

A novel compensation method for Zirconium dioxide gated Ion Sensitive Field Effect Transistors (ISFETs) to improve pH-dependent drift was demonstrated. Through the sequential measurements for both the n-channel and p-channel ISFETs, 75-100% pH-dependent drift could be successfully suppressed for the first seven hours. As a result, a nearly constant drift rate versus pH value was obtained, which increases the accuracy of pH measurements. Meanwhile, the drawback of the hyperbolic-like change with time of the common drift behavior for ISFETs was improved. A state-of-the-art integrated scheme adopting this method was also illustrated.

• 出版日期2010-5