Anisotropy of the in-plane strain in GaN grown on A-plane sapphire

作者：Paskov PP^*; Darakchieva V; Paskova T; Holtz PO; Monemar B

来源：Physica Status Solidi B-Basic Solid State Physics, 2002, 234(3): 892-896.

DOI：10.1002/1521-3951(200212)234:3<892::AID-PSSB892>3.0.CO;2-T

A comparative study of GaN layer grown by hydride vapour phase epitaxy on A-plane Sapphire before and after removal of the substrate is presented. A large anisotropy of the in-plane strain in the as-grown sample is revealed by X-ray diffraction measurements and polarized photoluminescence. The strain anisotropy is found to modify the selection rules for the transitions leading to a splitting of the optically active states of the A and B excitons. Almost complete strain relaxation and recovery of the optical isotropy in the (0001) plane is observed in the free-standing layer.

• 出版日期2002-12