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摘要
The electrical behavior of backgate graphene field effect (GFET) transistor was studied at different ambient conditions. Backgate p-channel GFET transistors were fabricated on oxidized silicon wafers by exfoliation of graphite. The carrier mobilities were determined from the measured transconductance. For all ambients investigated (N-2, Ar, and air), the graphene transistors show enhanced mobilities at elevated temperatures. This behavior can be explained by a stronger screening of scattering centers, i.e., defects in graphene and at the graphene oxide interface, with increasing temperature. For operation in air the transistors showed a higher transconductance compared to the operation in nitrogen and argon due to the strong acceptor-like behavior of gases adsorbed on the graphene surface.
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Effect of temperature and ambient on the output characteristic of a backgate GFET.
- 出版日期2010-4
