Mechanism of vertical Ge nanowire nucleation on Si (111) during subeutectic annealing and growth

作者：Park Se Jun; Chung Sung Hwan; Kim Bong Joong; Qi Minghao; Xu Xianfan; Stach Eric A; Yang Chen^*

来源：Journal of Materials Research, 2011, 26(21): 2744-2748.

DOI：10.1557/jmr.2011.313

The direct integration of Ge nanowires with silicon is of interest in multiple applications. In this work, we describe the growth of high-quality, vertically oriented Ge nanowires on Si (111) substrates utilizing a completely sub-Au-Si-eutectic annealing and growth procedure. With all other conditions remaining identical, annealing below the Au-Si eutectic results in successful heteroepitaxial nucleation and growth of Ge nanowires on Si substrate while annealing above the Au-Si eutectic leads to randomly oriented growth. A model is presented to elucidate the effect of the annealing temperature, in which we hypothesized that sub-Au-Si-eutectic annealing leads to the formation of a single and well-oriented interface, essential to template heteroepitaxial nucleation. These results are critically dependent on substrate preparation and lead to the creation of integrated nanowire systems with a low thermal budget process.

• 出版日期2011-11