AgBiS2 single crystal grown using slow cooling method and its characterization

作者：Nakamura Masaru^*; Nakamura Hiroaki; Ohsawa Takeo; Imura Masataka; Shimamura Kiyoshi; Ohashi Naoki

来源：Journal of Crystal Growth, 2015, 411: 1-3.

DOI：10.1016/j.jcrysgro.2014.10.042

• Single crystal growth
• Growth from melt
• Sulfides
• Semiconducting ternary compounds

Silver bismuth sulfide (AgBiS2) single crystal was successfully grown using the slow cooling method. Characterization of a grown crystal using power X-ray diffraction (XRD) revealed a single AgBiS2 phase and a cubic structure with lattice parameter a=5.641 angstrom. The crystal was found to have a high-temperature phase with a cubic structure. XRD measurement and composition analysis showed that the stoichiometric composition of the AgBiS2 was equivalent to the congruent melt composition. The grown AgBiS2 crystal was confirmed to be single crystal by observing the Laue X-ray backscattering pattern. Differential thermal analysis showed that the melting point of the AgBiS2 was 805 degrees C. The grown crystal had n-type conductivity, a carrier concentration of 2.6 x 10(18) cm(3), electrical resistivity of 2.1 Omega cm, and hole mobility of 1.1 cm(2)/V s at room temperature.

• 出版日期2015-2-1