Large tunneling anisotropic magnetoresistance in La0.7Sr0.3MnO3/pentacene/Cu structures prepared on SrTiO3 (110) substrates

作者：Kamiya Takeshi; Miyahara Chihiro; Tada Hirokazu^*

来源：Applied Physics Letters, 2017, 110(3): 032401.

DOI：10.1063/1.4974079

We investigated tunneling anisotropic magnetoresistance (TAMR) at the interface between pentacene and La0.7Sr0.3MnO3 (LSMO) thin films prepared on SrTiO3 (STO) (110) substrates. The dependence of the TAMR ratio on the magnetic field strength was approximately ten times larger than that of the magnetic field angle at a high magnetic field. This large difference in the TAMR ratio is explained by the interface magnetic anisotropy of strain-induced LSMO thin films on a STO (110) substrate, which has an easy axis with an out-of-plane component. We also note that the TAMR owing to out-of-plane magnetization was positive at each angle of the in-plane magnetic field. This result implies that active control of the interface magnetic anisotropy between organic materials and ferromagnetic metals should realize nonvolatile and high-efficiency TAMR devices. Published by AIP Publishing.

• 出版日期2017-1-16