A 36 ppm/degrees C BiCMOS current reference without requiring curvature-compensation

作者:Yang, Ning*; Shi, Yi-kai; Wang, Wen-dong; Yuan, Xiaoqing
来源:Analog Integrated Circuits and Signal Processing, 2014, 80(1): 99-104.
DOI:10.1007/s10470-014-0302-4

摘要

A low temperature coefficient and high precision current reference generator, with simplified current biasing circuit with only four MOSFETs, has been designed using CSMC's 0.5 mu m BiCMOS process. Utilizing source follower and emitter follower as the bandgap reference output stage, a high performance bandgap reference with no Early effect and low output resistance is realized. A one diode-connected circuit is introduced to further simplify the current biasing. Simulation results of the proposed current reference generator indicate that the output current of 2 mu A exhibit a variation of 0.5 % over the temperature range of -40 to 125 A degrees C is achieved. The current reference draws 21 mu A from a 5 V supply. Corner and two hundred runs Monte Carlo simulation show that the maximum deviation from the desired value of the reference current are less than 3.05 % and +/- A 2.6 %, respectively. This high precision current reference generator is intended for Organic LED driver circuits.