Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress

作者：Su Hao^*; Wang Hong; Liao Hong; Hu Hang

来源：IEEE Transactions on Electron Devices, 2012, 59(11): 3078-3083.

DOI：10.1109/TED.2012.2212022

• Channel noise
• hot carrier (HC)
• RF metal-oxide-semiconductor field-effect transistors (MOSFETs)
• semiconductor device noise

In this paper, high-frequency noise under different hot-carrier (HC) stress modes in nMOSFETs has been characterized and analyzed. The experimental results revealed a significant larger increase in NFmin and R-n under maximum substrate current I-B,I-max stress or hot hole injection H-inj than hot electron injection E-inj. It is suggested that the difference in high-frequency noise after stress strongly depends on the type of defects generated during HC stresses. Our results provide experimental verification that the shallow interface states/traps at the Si/SiO2 interface introduced by HC stress play an important role in the degradation of high-frequency channel noise.

• 出版日期2012-11
• 单位南阳理工学院