A novel 4H-SiC MESFET with a L-gate and a partial p-type spacer

作者：Jia, Hujun^*; Zhang, Hu; Yang, Yintang

来源：Materials Science in Semiconductor Processing, 2012, 15(1): 2-5.

DOI：10.1016/j.mssp.2011.09.008

• 4H-SiC
• MESFET
• L-gate
• Partial p-type spacer

A 4H-SiC MESFET incorporated with L-gate and partial p-type spacer (LP-MESFET) is proposed and simulated. The simulations show that obvious improvements can be obtained for the LP-MESFET compared to the conventional structure (C-MESFET), such as a 17% larger of the saturation current, a 36% higher of the breakdown voltage V-b and a 95% larger of the maximum output power densities. Furthermore, the decrease of the g,ate-drain capacitance (C-GD) will lead to an improved RF performance for the LP-MESFET.

• 出版日期2012-2
• 单位西安电子科技大学