A fabrication method for reduction of silicide contamination in polycrystalline-silicon thin-film transistors

作者：Song Nam Kyu^*; Kim Young Su; Kim Min Sun; Han Shin Hee; Joo Seung Ki

来源：Electrochemical and Solid-State Letters, 2007, 10(5): H142-H144.

DOI：10.1149/1.2710962

A major cause of degradations in polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated by Ni metal-induced lateral crystallization (MILC) is known to be due to the presence of Ni silicides in the channel region. In this letter, we proposed a structure for the reduction of Ni silicides in the MILC region. Also, the electrical properties of poly-Si TFTs which were fabricated with the structure were investigated. It was found that the field-effect mobility and the leakage current of p-channel Ni seed MILC TFTs is significantly improved compared to TFTs fabricated by conventional MILC process.

• 出版日期2007