Improved circuit model for coplanar-waveguide to microstrip-line transition on silicon substrate

作者：Hua, Qi; Yin, Wen Yan^*; Zhou, Liang; Mao, Jun Fa; Kang, Kai; Zhu, Lei

来源：Microwave and Optical Technology Letters, 2008, 50(1): 141-144.

DOI：10.1002/mop.23011

• finite ground coplanar waveguide (FGCPW)
• finite ground thin film microstrip line (FGTFML)
• metal via transition
• frequency(in)dependent
• silicon substrate

An improved equivalent circuit model is proposed to accurately characterize a metal via transition, between a finite ground coplanar waveguide (FGCPW) and a finite ground thin film microstrip line (FGTFML), which was fabricated using standard CMOS technology. This circuit model with only a few lumped-circuit elements is established and optimized to achieve a wide frequency range of operation, i.e., 1.0-30.0 GHz. A via transition circuit is fabricated and the measured results have evidently validated the predicted results derived from our proposed circuit model.

• 出版日期2008-1
• 单位南阳理工学院; 上海交通大学