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摘要
An analytical model with bounded boundary conditions for CMOS Image Sensor (CIS) in a vertical pinned photodiode (PPD) is presented in this paper. According to the comparison with the numerical simulation and measured data, this model has been proved to be valid for fast simulation of opto-electronic integrated circuit (OEIC). Furthermore, it has been implemented into Hspice, to capture the specific characteristics of sensor applications with PPDs. This PPD model including concise mathematical formulation of carrier transport mechanism is useful in developing generic compact models which includes the advanced physical effects.
