科研之友
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摘要
Exfoliation of a thin silicon layer after hydrogen implantation was investigated as a potential step of a kerf-free wafer production process. Samples of p-type silicon were implanted with high doses of hydrogen ions at 2 MeV, and subsequently annealed at 500-800 degrees C. The concentration profile of hydrogen ions implanted in silicon was simulated by using the stopping and range of ions in matter (SRIM2003) program. The obtained hydrogen depth normal distribution exhibited a narrow peak at similar to 48 mu m, which was in good agreement with the calculated projection range of a 2 MeV hydrogen ion beam. During the annealing, crack nucleation was detected by using the acoustic emission technique. Layer splitting occurred at the projected range of implantation, and was characterized by performing acoustic emission parametric analysis.
- 出版日期2016-1
