High-quality InGaN/GaN heterojunctions and their photovoltaic effects

作者：Zheng Xinhe^*; Horng Ray Hua; Wuu Dong Sing; Chu Mu Tao; Liao Wen Yih; Wu Ming Hsien; Lin Ray Ming; Lu Yuan Chieh

来源：Applied Physics Letters, 2008, 93(26): 261108.

DOI：10.1063/1.3056628

• electrical conductivity
• gallium compounds
• III-V semiconductors
• indium compounds
• leakage currents
• MOCVD
• photoluminescence
• photovoltaic cells
• photovoltaic effects
• semiconductor epitaxial layers
• semiconductor heterojunctions
• wide band gap semiconductors
• X-ray diffraction

High-quality p-GaN/i-In(0.1)Ga(0.9)N/n-GaN heterojunctional epilayers are grown on (0001)-oriented sapphire substrates by metal organic chemical vapor deposition. The Pendellosung fringes around the InGaN peak in high-resolution x-ray diffraction (HRXRD) confirm a sharp interface between InGaN and GaN films. The corresponding HRXRD and photoluminescence measurements demonstrate that there is no observable phase separation. The improvement in crystal quality yields high-performance photovoltaic cells with open-circuit voltage of around 2.1 eV and fill factor up to 81% under standard AM 1.5 condition. The dark current-voltage measurements show very large shunt resistance, implying an insignificant leakage current in the devices and therefore achieving the high fill factor in the illuminated case.

• 出版日期2008-12-29
• 单位长春大学