科研之友
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摘要
A silicon avalanche photodetector with a low breakdown voltage of -6.78 V is demonstrated by narrowing down the intrinsic layer width of interdigitated p-i-n junctions to similar to 150 nm. It reaches the physical limit of avalanche breakdown in which the performance degradation caused by the Zener tunneling process is negligible. Dark current <350 pA at -4 V is measured, and a responsivity (gain) exceeding 1.424 A/W (110) at -6.75 V is obtained with an 850-nm laser illumination. The intrinsic bandwidth is determined to be 10 GHz, suggesting our device is applicable for a 10-Gb/s high-speed optical receiver application and beyond.
- 出版日期2014-3-15
- 单位清华大学
